Datasheet > SK20H45

SK20H45

更新时间： 2024-01-11 23:50:38

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	199K
描述
Schottky Barrier Rectifier

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中文翻译

获取价格

数据手册

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SK20H45 数据手册

SK20H45

Taiwan Semiconductor

CREAT BY ART

Schottky Barrier Rectifier

FEATURES

- Low forward voltage drop

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- For use as Bypass diode in Solar application.

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

R-6

MECHANICAL DATA

Case: R-6

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Weight: 1.6 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

SK20H45

SYMBOL

V_RRM

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RMS

Maximum DC blocking voltage

Maximum average forward rectified current

V_DC

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

I_FSM

275

Maximum instantaneous forward voltage (Note 1)

I_F= 20 A

V_F

0.55

0.5

Maximum DC reverse current

at rated DC blocking voltage

@T_J=25 ℃

I_R

@T_J=100 ℃

^OC/W

^OC

Typical thermal resistance

R_θJL

T_J

Junction temperature range

- in DC forward mode

<=200

^OC

Storage temperature range

T_STG

- 50 to +175

Note 1: Pulse test with PW=300μs, 1% duty cycle

Document Number: DS_D1310005

Version: C13

12 3 4

中文翻译

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