Datasheet > SK20GD07E3ETE1

SK20GD07E3ETE1

更新时间： 2023-12-06 20:10:56

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
7页	760K
描述
IGBT Modules SEMITOP E1 (63x34x12)

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SK20GD07E3ETE1 数据手册

SK20GD07E3ETE1

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

650

-20 ... 20

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®E1

Sixpack Open Emitter

SK20GD07E3ETE1

Features*

V_CC= 360 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 650 V

T_j

-40 ... 175

Inverse - Diode

T_j= 25 °C

V_RRM

I_F

650

°C

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

• Optimized design for superior thermal

performance

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Low inductive design

I_FRM

I_FSM

T_j

150

• Press-Fit contact technology

• 650V Trench IGBT3 (E3)

• Robust and soft switching CAL4F

diode technology

t_p= 10 ms, sin 180°, T_j= 150 °C

-40 ... 175

Module

I_t(RMS)

T_stg

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

, ∆T_terminalat PCB joint = 30 K, per pin

module without TIM

AC, sinusoidal, t = 1 min

-40 ... 125

2500

°C

Typical Applications

V_isol

• Motor drives

• Servo drives

• Air conditioning

• Auxiliary Inverters

• UPS

Characteristics

Symbol Conditions

Inverter - IGBT

min.

typ.

max.

Unit

Remarks

• Recommended T_j,op=-40 ...+150 °C

I_C= 20 A

T_j= 25 °C

V_CE(sat)

1.45

1.83

1.87

2.10

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.90

0.82

5.8

1.00

0.90

6.4

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

V_GE= V_CE, I_C= 0.29 mA

V_GE= 0 V, V_CE= 650 V, T_j= 25 °C

f = 1 MHz

V_GE= -15 V ... +15 V

T_j= 25 °C

5.1

1.10

0.07

0.03

203

0.67

174

V_CE= 25 V

_GE= 0 V

V_CC= 300 V

T_j= 150 °C

_C= 20 A

_{G on}= 18 Ω

_{G off}= 18 Ω

E_on

t_d(off)

t_f

di/dt_on= 720 A/µs

di/dt_off= 370 A/µs

dv/dt = 4900 V/µs

_GE= +15/-15 V

T_j= 150 °C

E_off

0.53

per IGBT, λ_paste=0.8 W/(mK)

per IGBT, λ_paste=2.5 W/(mK)

R_th(j-s)

1.72

1.35

K/W

GD-ET

Rev. 1.0 – 23.12.2021

12 3 4 5 6 7

中文翻译

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