SK20DGDL07E3ETE1
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
Values
Unit
Tj = 25 °C
VCES
IC
650
25
20
29
23
20
40
-20 ... 20
V
A
A
A
A
A
A
V
Ts = 70 °C
Ts = 100 °C
Ts = 70 °C
Ts = 100 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
IC
λpaste=2.5 W/(mK)
Tj = 175 °C
ICnom
ICRM
VGES
SEMITOP®E1
VCC = 360 V
3-phase
tpsc
V
V
GE ≤ 15 V
Tj = 150 °C
6
µs
°C
CES ≤ 650 V
Converter-Inverter-Brake
(CIB)
Tj
-40 ... 175
Chopper - IGBT
Tj = 25 °C
VCES
IC
650
25
20
29
24
20
40
-20 ... 20
V
A
A
A
A
A
A
V
SK20DGDL07E3ETE1
Features*
• Optimized design for superior thermal
performance
• Low inductive design
Ts = 70 °C
Ts = 100 °C
Ts = 70 °C
Ts = 100 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
IC
λpaste=2.5 W/(mK)
Tj = 175 °C
ICnom
ICRM
VGES
• Press-Fit contact technology
• 650V Trench IGBT3 (E3)
• Robust and soft switching CAL4F
diode technology
• PEP rectifier diode technology for
enhanced power and environmental
robustness
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
VCC = 360 V
V
V
GE ≤ 15 V
Tj = 150 °C
tpsc
6
µs
°C
CES ≤ 650 V
Tj
-40 ... 175
Inverse - Diode
Tj = 25 °C
VRRM
IF
650
29
23
34
27
V
A
A
A
A
A
A
°C
Ts = 70 °C
Ts = 100 °C
Ts = 70 °C
Ts = 100 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Typical Applications
IF
λpaste=2.5 W/(mK)
Tj = 175 °C
• Motor drives
• Air conditioning
• Auxiliary Inverters
IFRM
IFSM
Tj
60
150
tp = 10 ms, sin 180°, Tj = 150 °C
Remarks
• Recommended Tj,op=-40 ...+150 °C
-40 ... 175
Freewheeling - Diode
Tj = 25 °C
VRRM
IF
650
29
23
34
27
V
A
A
A
A
Ts = 70 °C
Ts = 100 °C
Ts = 70 °C
Ts = 100 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
IF
λpaste=2.5 W/(mK)
Tj = 175 °C
IFRM
IFSM
Tj
60
150
-40 ... 175
A
A
°C
tp = 10 ms, sin 180°, Tj = 150 °C
DGDL-ET
© by SEMIKRON
Rev. 1.0 – 22.12.2021
1