SK202

更新时间： 2024-02-01 07:53:50

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	38K
描述
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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中文翻译

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技术参数
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SK202 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.79	配置：	SINGLE
二极管类型：	ZENER DIODE	元件数量：	1
最大功率耗散：	10 W	标称参考电压：	87 V
子类别：	Voltage Reference Diodes	表面贴装：	NO
最大电压容差：	5%	Base Number Matches：	1

SK202 数据手册

polyfet rf devices

SK202

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

10.0 Watts Push - Pull

Package Style AK

"Polyfet" process features

low feedback and output capacitances

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

resulting in high F transistors with high

input impedance and high efficiency.

25 C )

ABSOLUTE MAXIMUM RATINGS ( T =

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Storage

Temperature

C/W

3.0

50 Watts

200 C

-65 C to 150 C

70V

20 V

3.40

RF CHARACTERISTICS (

10.0 WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Idq = 0.80 A, Vds = 28.0 V, F = 1,000

Gps

Common Source Power Gain

Drain Efficiency

MHz

Idq =

0.80

A, Vds = 28.0 V, F = 1,000 MHz

Idq = 0.80

A, Vds = 28.0 V, F =1,000

MHz

VSWR

Load Mismatch Tolerance

20:1

Relative

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Drain Breakdown Voltage

Ids = 20.00 mA, Vgs = 0V

Vds =

Bvdss

Idss

0.4

Zero Bias Drain Current

Gate Leakage Current

28.0 V, Vgs = 0V

Igss

Vgs

Vds = 0V Vgs = 30V

Gate Bias for Drain Current

Ids = 0.04 A, Vgs = Vds

0.6

Forward Transconductance

Saturation Resistance

Mho

Vds = 10V, Vgs = 5V

Rdson

Ohm

Vgs = 20V, Ids = 1.00 A

2.00

2.80

20.0

1.2

Idsat

Ciss

Crss

Coss

Saturation Current

Amp

Vgs = 20V, Vds = 10V

28.0 Vgs = 0V, F = 1 MHz

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds =

28.0 Vgs = 0V, F = 1 MHz

12.0

REVISION 03/28/2001

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

中文翻译

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