Datasheet > SK200TMLI12F4TE2

SK200TMLI12F4TE2

更新时间： 2023-12-06 20:10:48

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
9页	1254K
描述
IGBT Modules SEMITOP E2 (63x57x12)

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SK200TMLI12F4TE2 数据手册

SK200TMLI12F4TE2

Absolute Maximum Ratings

Symbol Conditions

IGBT1

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

169

135

248

200

600

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®E2

3-Level TNPC

SK200TMLI12F4TE2

Features*

V_CC= 800 V, V_GE≤ 15 V, T_j= 150 °C,

_CES≤ 1200 V

t_psc

T_j

µs

°C

-40 ... 175

IGBT2

V_CES

I_C

T_j= 25 °C

650

102

123

100

300

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Optimized design for superior thermal

performances

I_Cnom

I_CRM

V_GES

• Low inductive design

• Press-Fit contact technology

• 1200V Trench IGBT4 Fast (F4)

• 650V Trench IGBT3 (E3)

• Robust and soft switching CAL4F

diode technology

V_CC= 360 V, V_GE≤ 15 V, T_j= 150 °C,

_CES≤ 650 V

t_psc

µs

°C

T_j

-40 ... 175

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

Diode1

V_RRM

I_F

T_j= 25 °C

1200

101

150

430

-40 ... 175

°C

Typical Applications

• UPS

• Solar

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

Remarks*

• Recommended T_jop= -40 ... +150°C

• IGBT1: outer IGBTs T1 & T4

• IGBT2: inner IGBTs T2 & T3

I_FRM

I_FSM

T_j

10 ms, sin 180°, T_j= 25 °C

• Diode1: outer diodes D1 & D4

• Diode2: inner diodes D2 & D3

Diode2

V_RRM

I_F

T_j= 25 °C

650

132

104

T_s= 25 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_FRM

I_FSM

T_j

200

820

-40 ... 175

°C

10 ms, sin 180°, T_j= 25 °C

AC, sinusoidal, t = 1 min

Module

I_t(RMS)

T_stg

-40 ... 125

2500

°C

V_isol

TMLI-T

Rev. 2.0 – 05.11.2020

12 3 4 5 6 7...9

中文翻译

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