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SK200MB120CR03TE2 PDF预览

SK200MB120CR03TE2

更新时间: 2024-11-19 14:55:55
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON /
页数 文件大小 规格书
7页 762K
描述
SiC Modules SEMITOP E2 (63x57x12)

SK200MB120CR03TE2 数据手册

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SK200MB120CR03TE2  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
MOSFET 1  
VDSS  
ID  
1200  
218  
182  
V
A
A
Ts = 25 °C  
Ts = 70 °C  
Tj = 175 °C  
IDM  
Pulse width tp limited by Tjmax  
600  
A
IDM,repetitive  
320  
A
VGS  
Tj  
Max. transient gate - source voltage  
-8 ... 19  
-55 ... 175  
V
°C  
SEMITOP®E2  
Integrated body diode  
IFM  
IFM,repetitive  
Pulse width tp limited by Tjmax  
600  
320  
A
A
Half-Bridge (Full SiC)  
Engineering Sample  
SK200MB120CR03TE2  
Target Data  
Absolute Maximum Ratings  
Symbol Conditions  
Module  
Values  
Unit  
Features*  
• Optimized design for superior thermal  
performance  
• Extremely low inductance design  
• Press-Fit contact technology  
• 1200V Planar Gen3 SiC MOS  
• Simple to drive with +15V gate voltage  
• Integrated NTC temperature sensor  
• UL recognized file no. E 63 532  
Tterminal at PCB joint = 30 K, per pin  
It(RMS)  
Tstg  
30  
-40 ... 125  
2500  
A
°C  
V
Visol  
AC, sinusoidal, t = 1 min  
Typical Applications  
• Switched Mode Power Supplies  
• Energy Storage Systems  
• Electric Vehicle charging  
• UPS  
• Solar  
• Motor Drives  
Remarks  
• Recommended Tj,op=-40 ...+150 °C  
• Recommended turn-off / turn-on gate  
voltage VGS = -4...0/+15V  
Footnotes  
1) SEMIKRON Exclusive High Performance  
Thermal Paste (HPTP), available as  
pre-applied  
MB-T  
© by SEMIKRON  
Rev. 0.6 – 13.01.2021  
1

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