Datasheet > SK200MB120CR03TE2

SK200MB120CR03TE2

更新时间： 2023-12-06 20:11:49

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
7页	762K
描述
SiC Modules SEMITOP E2 (63x57x12)

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中文翻译

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SK200MB120CR03TE2 数据手册

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SK200MB120CR03TE2

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

MOSFET 1

V_DSS

I_D

1200

218

182

T_s= 25 °C

T_s= 70 °C

T_j= 175 °C

I_DM

Pulse width t_plimited by T_jmax

600

I_{DM,repetitive}

320

V_GS

T_j

Max. transient gate - source voltage

-8 ... 19

-55 ... 175

°C

SEMITOP^®E2

Integrated body diode

I_FM

I_{FM,repetitive}

Pulse width t_plimited by T_jmax

600

320

Half-Bridge (Full SiC)

Engineering Sample

SK200MB120CR03TE2

Target Data

Absolute Maximum Ratings

Symbol Conditions

Module

Values

Unit

Features*

• Optimized design for superior thermal

performance

• Extremely low inductance design

• Press-Fit contact technology

• 1200V Planar Gen3 SiC MOS

• Simple to drive with +15V gate voltage

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

∆T_terminalat PCB joint = 30 K, per pin

I_t(RMS)

T_stg

-40 ... 125

2500

°C

V_isol

AC, sinusoidal, t = 1 min

Typical Applications

• Switched Mode Power Supplies

• Energy Storage Systems

• Electric Vehicle charging

• UPS

• Solar

• Motor Drives

Remarks

• Recommended T_j,op=-40 ...+150 °C

• Recommended turn-off / turn-on gate

voltage V_GS= -4...0/+15V

Footnotes

¹⁾SEMIKRON Exclusive High Performance

Thermal Paste (HPTP), available as

pre-applied

MB-T

Rev. 0.6 – 13.01.2021

12 3 4 5 6 7

中文翻译

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