Datasheet > SK 15 GH 066

SK 15 GH 066

更新时间： 2024-11-19 14:55:15

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	628K
描述
IGBT Modules SEMITOP 2 (41x28x12)

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中文翻译

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数据手册

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SK 15 GH 066 数据手册

SK 15 GH 066

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

600

T_s= 25 °C

T_s= 70 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

-20 ... 20

SEMITOP^®2

IGBT module

SK 15 GH 066

Features*

V_CC= 360 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 600 V

T_j

-40 ... 175

Inverse - Diode

T_j= 25 °C

V_RRM

I_F

600

T_s= 25 °C

T_s= 70 °C

T_j= 175 °C

I_FRM

I_FSM

T_j

10 ms, sin 180°, T_j= 150 °C

• Compact design

-40 ... 175

°C

• One screw mounting module

• Heat transfer and insulation through

direct copper bonded aluminium oxide

ceramic (DBC)

• 600V Trench IGBT3 technology

• 600V CAL IHD diode technology

• Integrated NTC temperature sensor

• UL recognized, file no. E 63 532

Module

I_t(RMS)

T_stg

∆T_terminalat PCB joint = 30 K, per pin

-40 ... 125

2500

°C

V_isol

AC, sinusoidal, t = 1 min

Characteristics

Symbol Conditions

Inverter - IGBT

min.

typ.

max.

Unit

Typical Applications

• DC/DC Converter

• Motor Drives

• Welding

I_C= 15 A

T_j= 25 °C

V_CE(sat)

1.45

1.65

1.90

2.05

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.90

0.85

5.8

1.00

0.90

6.5

0.1

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

E_off

R_th(j-s)

V_GE= V_CE, I_C= 0.21 mA

V_GE= 0 V, V_CE= 600 V, T_j= 25 °C

f = 1 MHz

0.86

0.055

0.024

100

0.3

135

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= -8V ... +15V

T_j= 25 °C

V_CC= 300 V

T_j= 150 °C

_C= 15 A

_{G on}= 6.2 Ω

_{G off}= 6.2 Ω

di/dt_on= 1506 A/µs

di/dt_off= 325 A/µs

_GE= +15/-8 V

0.35

2.19

K/W

per IGBT, λ_paste=0.8 W/(mK)

Rev. 1.0 – 21.10.2020

12 3 4 5 6

中文翻译

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