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SK15DGDL12T4ETE1 PDF预览

SK15DGDL12T4ETE1

更新时间: 2024-09-18 14:53:51
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
10页 933K
描述
IGBT Modules SEMITOP E1 (63x34x12)

SK15DGDL12T4ETE1 数据手册

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SK15DGDL12T4ETE1  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT 1  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
26  
21  
30  
25  
15  
45  
-20 ... 20  
V
A
A
A
A
A
A
V
Ts = 25 °C  
Ts = 70 °C  
Ts = 25 °C  
Ts = 70 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
IC  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
SEMITOP®E1  
ICRM = 3 x ICnom  
VCC = 800 V  
3-phase bridge rectifier +  
brake chopper + 3-phase  
bridge inverter  
tpsc  
Tj  
V
V
GE 15 V  
CES 1200 V  
Tj = 150 °C  
10  
µs  
°C  
-40 ... 175  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT 2  
SK15DGDL12T4ETE1  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
26  
21  
30  
25  
15  
45  
-20 ... 20  
V
A
A
A
A
A
A
V
Features*  
Ts = 25 °C  
Ts = 70 °C  
Ts = 25 °C  
Ts = 70 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
• Low inductive design  
• Press-Fit contact technology  
• Rugged mounting due to integrated  
mounting clamps  
• Heat transfer and insulation through  
direct copper bonded aluminium oxide  
ceramic (DBC)  
• Trench4 IGBT technology  
• Robust and soft switching CAL4F  
diode technology  
• Integrated NTC temperature sensor  
• UL recognized file no. E 63 532  
IC  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3 x ICnom  
VCC = 800 V  
V
V
GE 15 V  
CES 1200 V  
Tj = 150 °C  
tpsc  
Tj  
10  
µs  
°C  
-40 ... 175  
Typical Applications  
Absolute Maximum Ratings  
Symbol Conditions  
Diode 1  
• Motor drives  
• Air conditioning  
• Auxiliary Inverters  
Values  
Unit  
Tj = 25 °C  
VRRM  
IF  
1600  
34  
25  
38  
29  
V
A
A
A
A
A
A
A²s  
°C  
Remarks  
Ts = 25 °C  
Ts = 70 °C  
Ts = 25 °C  
Ts = 70 °C  
• IGBT1: inverter IGBT  
• IGBT2: brake IGBT  
• Diode1: rectifier diode  
• Diode2: APD inverter  
• Diode3: FWD brake  
λpaste=0.8 W/(mK)  
Tj = 150 °C  
IF  
λpaste=2.5 W/(mK)  
Tj = 150 °C  
IFnom  
IFSM  
i2t  
8
10 ms, sin 180°, Tj = 150 °C  
10 ms, sin 180°, Tj = 150 °C  
200  
200  
-40 ... 150  
Tj  
DGDL-ET  
© by SEMIKRON  
Rev. 1.0 – 24.04.2020  
1

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