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SK15DGDL07E3ETE1 PDF预览

SK15DGDL07E3ETE1

更新时间: 2024-11-08 14:54:31
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
9页 910K
描述
IGBT Modules SEMITOP E1 (63x34x12)

SK15DGDL07E3ETE1 数据手册

 浏览型号SK15DGDL07E3ETE1的Datasheet PDF文件第2页浏览型号SK15DGDL07E3ETE1的Datasheet PDF文件第3页浏览型号SK15DGDL07E3ETE1的Datasheet PDF文件第4页浏览型号SK15DGDL07E3ETE1的Datasheet PDF文件第5页浏览型号SK15DGDL07E3ETE1的Datasheet PDF文件第6页浏览型号SK15DGDL07E3ETE1的Datasheet PDF文件第7页 
SK15DGDL07E3ETE1  
Absolute Maximum Ratings  
Symbol Conditions  
Inverter - IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
650  
20  
17  
23  
19  
15  
30  
-20 ... 20  
V
A
A
A
A
A
A
V
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
IC  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
SEMITOP®E1  
VCC = 360 V  
3-phase  
tpsc  
V
V
GE 15 V  
Tj = 150 °C  
6
µs  
°C  
CES 650 V  
Converter-Inverter-Brake  
(CIB)  
Tj  
-40 ... 175  
Chopper - IGBT  
Tj = 25 °C  
VCES  
IC  
650  
20  
17  
23  
19  
15  
30  
-20 ... 20  
V
A
A
A
A
A
A
V
SK15DGDL07E3ETE1  
Features*  
• Optimized design for superior thermal  
performance  
• Low inductive design  
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
IC  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
• Press-Fit contact technology  
• 650V Trench IGBT3 (E3)  
• Robust and soft switching CAL4F  
diode technology  
• PEP rectifier diode technology for  
enhanced power and environmental  
robustness  
• Integrated NTC temperature sensor  
• UL recognized file no. E 63 532  
VCC = 360 V  
V
V
GE 15 V  
Tj = 150 °C  
tpsc  
6
µs  
°C  
CES 650 V  
Tj  
-40 ... 175  
Inverse - Diode  
Tj = 25 °C  
VRRM  
IF  
650  
29  
23  
34  
27  
V
A
A
A
A
A
A
°C  
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
Typical Applications  
IF  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
• Motor drives  
• Air conditioning  
• Auxiliary Inverters  
IFRM  
IFSM  
Tj  
60  
150  
tp = 10 ms, sin 180°, Tj = 150 °C  
Remarks  
• Recommended Tj,op=-40 ...+150 °C  
-40 ... 175  
Freewheeling - Diode  
Tj = 25 °C  
VRRM  
IF  
650  
29  
23  
34  
27  
V
A
A
A
A
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
IF  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
IFRM  
IFSM  
Tj  
60  
150  
-40 ... 175  
A
A
°C  
tp = 10 ms, sin 180°, Tj = 150 °C  
DGDL-ET  
© by SEMIKRON  
Rev. 1.0 – 22.12.2021  
1

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