Datasheet > SK 150 GAH 12T4 Tp

SK 150 GAH 12T4 Tp

更新时间： 2024-11-22 14:55:59

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	314K
描述
IGBT Modules SEMITOP 4 Press-Fit (61x55x12)

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中文翻译

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SK 150 GAH 12T4 Tp 数据手册

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SK150GAH12T4Tp

Absolute Maximum Ratings

Symbol Conditions

IGBT 1

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

167

135

150

450

T_s= 25 °C

T_s= 70 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3 x I_Cnom

V_CC= 800 V

-20 ... 20

SEMITOP^®4 Press-Fit

_GE≤ 15 V

_CES≤ 1200 V

T_j= 150 °C

t_psc

T_j

µs

°C

-40 ... 175

IGBT module

Engineering Sample

SK150GAH12T4Tp

Target Data

Absolute Maximum Ratings

Symbol Conditions

Diode 1

Values

Unit

T_j= 25 °C

V_RRM

I_F

1200

Features

T_s= 25 °C

T_s= 70 °C

• One screw mounting module

• Solder free mounting with Press-Fit

terminals

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

• Fully compatible with other SEMITOP^®

2 and 3 Press-Fit

I_FRM= 3 x I_Fnom

10 ms, sin 180°, T_j= 150 °C

-40 ... 175

°C

• Improved thermal performances by

aluminum oxide substrate

• Trench4 IGBT technology

• CAL4F diode technology

• Integrated PTC temperature sensor

• UL recognized, file no. E 63 532

Absolute Maximum Ratings

Symbol Conditions

Diode 2

Values

Unit

Typical Applications*

T_j= 25 °C

V_RRM

I_F

1200

155

123

150

450

• Switching SR Drives

• Inverter

T_s= 25 °C

T_s= 70 °C

T_j= 175 °C

• Switched mode power supplies

• UPS

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3 x I_Fnom

10 ms, sin 180°, T_j= 150 °C

774

-40 ... 175

°C

Absolute Maximum Ratings

Symbol Conditions

Module

Values

Unit

I_t(RMS)

T_stg

V_isol

T_terminal= 100 °C, T_S= 60°C

-40 ... 125

2500

°C

AC, sinusoidal, 50Hz, t = 1 min

GAH-T

Rev. 0.1 – 15.02.2017

12 3 4 5

中文翻译

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