Datasheet > SK10DGDL12T7ETE1s

SK10DGDL12T7ETE1s

更新时间： 2024-11-07 14:53:47

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
10页	980K
描述
IGBT Modules SEMITOP E1 Solder (63x34x12)

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中文翻译

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数据手册

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SK10DGDL12T7ETE1s 数据手册

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SK10DGDL12T7ETE1s

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®E1 Solder

V_CC= 800 V

3-phase

t_psc

_GE≤ 15 V

T_j= 175 °C

µs

°C

_CES≤ 1200 V

Converter-Inverter-Brake

(CIB)

T_j

-40 ... 175

Chopper - IGBT

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

SK10DGDL12T7ETE1s

Features*

• Optimized design for superior thermal

performance

• Low inductive design

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

• Solder contact technology

• 1200V Generation 7 IGBT (T7)

• Robust and soft switching CAL4F

diode technology

• PEP rectifier diode technology for

enhanced power and environmental

robustness

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

V_CC= 800 V

_GE≤ 15 V

T_j= 175 °C

t_psc

µs

°C

_CES≤ 1200 V

T_j

-40 ... 175

Inverse - Diode

T_j= 25 °C

V_RRM

I_F

1200

-40 ... 175

°C

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Typical Applications

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Motor drives

• Air conditioning

• Auxiliary Inverters

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 150 °C

Remarks

• Recommended T_j,op= -40 ...+150 °C

• T_j,op> 150 °C during overload (details

on AN19-002)

Freewheeling - Diode

T_j= 25 °C

V_RRM

I_F

1200

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_FRM

I_FSM

T_j

-40 ... 175

°C

t_p= 10 ms, sin 180°, T_j= 150 °C

DGDL-ET

Rev. 1.0 – 17.12.2021

12 3 4 5 6 7...10

中文翻译

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