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SK1080D1

更新时间: 2024-11-01 03:52:43
品牌 Logo 应用领域
德欧泰克 - DIOTEC 二极管
页数 文件大小 规格书
2页 81K
描述
Surface Mount Schottky Rectifiers - Single Diode

SK1080D1 数据手册

 浏览型号SK1080D1的Datasheet PDF文件第2页 
SK1020D1 ... SK10100D1  
SK1020D1 ... SK10100D1  
Surface Mount Schottky Rectifiers – Single Diode  
Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode  
Version 2006-04-06  
Nominal Current  
Nennstrom  
10 A  
6.6±0.2  
5.3±0.2  
2.3  
0.5  
4
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
20...100 V  
Type  
Typ  
Plastic case  
Kunststoffgehäuse  
TO-252AA  
D-PAK  
3
1
2
Weight approx.  
Gewicht ca.  
1.6 g  
1
2
3
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
4
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung Stoßspitzensperrspannung  
Surge peak reverse voltage  
Forward Voltage  
Durchlass-Spannung  
VF [V] 1)  
V
RRM [V]  
VRSM [V]  
IF = 5 A  
< 0.51  
< 0.51  
< 0.51  
< 0.51  
< 0.57  
< 0.57  
< 0.71  
< 0.71  
IF = 10 A  
< 0.55  
< 0.55  
< 0.55  
< 0.55  
< 0.65  
< 0.65  
< 0.83  
< 0.83  
10 A  
SK1020D1  
SK1030D1  
SK1040D1  
SK1045D1  
SK1050D1  
SK1060D1  
SK1080D1  
SK10100D1  
20  
30  
20  
30  
40  
40  
45  
45  
50  
50  
60  
60  
80  
80  
100  
100  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
IFAV  
IFRM  
IFSM  
IFSM  
i2t  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
TA = 25°C  
30 A 2)  
135/150 A  
115/125 A  
80 A2s  
Peak forward surge current  
50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
SK1020...  
SK1060D1  
SK1080...  
SK10100D1  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+175°C  
1
2
Tj = 25°C  
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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