Datasheet > SK 100 TAE 12

SK 100 TAE 12

更新时间： 2024-11-19 14:55:51

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
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描述
Thyristor / Diode Modules SEMITOP 2 (41x28x12)

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中文翻译

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SK 100 TAE 12 数据手册

SK 100 TAE 12

Absolute Maximum Ratings

Symbol Conditions

Diode 1

Values

Unit

T_j= 25 °C

V_RRM

I_F

1200

253

180

T_s= 25 °C

T_s= 70 °C

T_j= 150 °C

I_FSM

i²t

T_j

10 ms, T_j= 150 °C

2300

26450

-40 ... 150

A²s

°C

SEMITOP^®2

Absolute Maximum Ratings

Symbol Conditions

Thyristor 1

V_RRM

Values

Unit

Thyristor and Diode

separated in the same

housing

1200

V_DRM

T_j= 130 °C, T_s= 70 °C

t_p= 10 ms, sin 180°, T_j= 25 °C

I_T(AV)

I_TSM

i²t

2000

20000

-40 ... 130

A²s

°C

SK 100 TAE 12

Features*

T_j

Absolute Maximum Ratings

Symbol Conditions

Module

• Compact design

• One screw mounting

• High current density due to double

mesa technology

Values

Unit

• Heat transfer and insulation through

direct copper bonded aluminum oxide

ceramic (DBC)

∆T_terminalat PCB joint = 30 K, per pin

module without TIM

AC, sinusoidal, t = 1 min

I_t(RMS)

T_stg

V_isol

-40 ... 125

2500

°C

• Glass passivated thyristor chips

• High surge currents

• UL recognized, file no. E 63 532

Characteristics

Symbol Conditions

Diode 1

min.

typ.

max.

Unit

Typical Applications

• Controlled rectifier circuit

• Solid state relays

I_F= 160 A

T_j= 25 °C

V_F

1.00

0.90

1.21

1.10

T_j= 125 °C

chiplevel

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

V_F0

0.88

0.73

0.75

1.06

0.98

0.83

1.44

1.69

mΩ

K/W

chiplevel

r_F

chiplevel

T_j= 120 °C, V_RRM

I_R

R_th(j-s)

per diode, λ_paste=0.8 W/(mK)

0.4

TAE

Rev. 1.0 – 13.12.2021

12 3 4 5

中文翻译

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