Datasheet > SK100TAA16p

SK100TAA16p

更新时间： 2024-11-17 14:53:39

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
4页	406K
描述
Thyristor / Diode Modules SEMITOP 2 Press-Fit (28x40.5x12)

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中文翻译

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技术参数
数据手册

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SK100TAA16p 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.63
触发设备类型：	SCR	Base Number Matches：	1

SK100TAA16p 数据手册

SK100TAA16p

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

Thyristor 1

V_RRM

V_DRM

1600

T_j= 130 °C, T_s= 70 °C

t_p= 10 ms, sin 180°, T_j= 25 °C

I_T(AV)

I_TSM

i²t

2000

20000

-40 ... 130

A²s

°C

T_j

SEMITOP^®2 Press-Fit

Two separated thyristors

SK100TAA16p

Absolute Maximum Ratings

Symbol Conditions

Module

Values

Unit

∆T_terminalat PCB joint = 30 K, per pin

module without TIM

I_t(RMS)

T_stg

-40 ... 125

2500

°C

V_isol

AC, sinusoidal, t = 1 min

Features*

Characteristics

Symbol Conditions

Thyristor 1

• Compact design

min.

typ.

max.

Unit

• One screw mounting

• Solder free mounting with Press-Fit

terminals

T_j= 25 °C, I_T= 150 A

V_T

1.26

0.85

2.20

• High current density due to double

mesa technology

T_j= 130 °C

T_j= 130 °C, V_DD= V_DRM; V_RD= V_RRM

T_j= 25 °C, I_G= 1 A, di_G/dt = 1 A/µs

V_D= 0.67 * V_DRM

T_j= 130 °C

V_T(TO)

r_T

I_DD;I_RD

t_gd

t_gr

t_q

mΩ

µs

• Heat transfer and insulation through

direct copper bonded aluminum oxide

ceramic (DBC)

150

• Glass passivated thyristor chips

• Up to 1600V reverse voltage

• High surge currents

T_j= 25 °C

I_H

220

550

• UL recognized, file no. E 63 532

T_j= 25 °C, R_G= 33 Ω

T_j= 25 °C, d.c.

T_j= 130 °C, d.c.

I_L

Typical Applications

• Controlled rectifier circuit

• Solid state relays

V_GT

I_GT

V_GD

I_GD

100

0.25

per thyristor, λ_paste=0.8 W/(mK), sin.

180°

R_th(j-s)

0.47

K/W

Characteristics

Symbol Conditions

Module

min.

typ.

max.

Unit

M_s

to heatsink

weight

1.8

TAA

Rev. 1.0 – 15.10.2021

12 3 4

中文翻译

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