Datasheet > SK 100 GD 07F3 TD1

SK 100 GD 07F3 TD1

更新时间： 2024-11-19 14:55:43

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	348K
描述
IGBT Modules SEMITOP 4 (61x55x12)

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中文翻译

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数据手册

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SK 100 GD 07F3 TD1 数据手册

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SK100GD07F3TD1

Absolute Maximum Ratings

Symbol Conditions

IGBT 1

Values

Unit

T_j= 25 °C

V_CES

I_C

650

104

100

300

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

T_j= 150 °C

I_C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®4

IGBT module

SK100GD07F3TD1

Features

I_CRM= 3 x I_Cnom

V_CC= 400 V

V_GE≤ 15 V

T_j= 150 °C

t_psc

T_j

µs

°C

V_CES≤ 650 V

-40 ... 175

Absolute Maximum Ratings

Symbol Conditions

Diode 1

Values

Unit

ꢀ Compact design

T_j= 25 °C

V_RRM

I_F

650

°C

ꢀ One screw mounting module

ꢀ Improved thermal performances by

aluminium oxide substrate

ꢀ 650V Fast Trench3 IGBT technology

ꢀ Rapid switching 650V diode

technology

ꢀ Integrated NTC temperature sensor

ꢀ UL recognized, file no. E63 532

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

T_j= 150 °C

I_F

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

160

I_FRM= 2 x I_Fnom

10 ms, sin 180°,

Typical Applications*

-40 ... 175

ꢀ Switching (not for linear use)

ꢀ Inverter

ꢀ Switched mode power supplies

ꢀ UPS

Absolute Maximum Ratings

Symbol Conditions

Module

Values

Unit

I_t(RMS)

T_stg

V_isol

°C

-40 ... 125

2500

AC, sinusoidal, t = 1 min

Rev. 1.0 – 17.08.2015

12 3 4 5

中文翻译

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