Datasheet > SJM65R600D

SJM65R600D

更新时间： 2024-04-09 19:01:17

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	575K
描述
650V, N Channel, Super Junction MOSFETs

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数据手册

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SJM65R600D 数据手册

Super Junction Power MOSFET

SJM65R600D

Features



Low power loss by high speed switching and low on-resistance

Excellent thermal behavior

HBM: JESD22-A114-B: 1B

Product validation acc. JEDEC Standard

Applications



PFC power supply stages

Lighting applications

Telecom

Server

UPS

Mechanical Data



Case: TO-252

TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

SJM65R600D

80 pcs / Tube & 2500 pcs / Tape & Reel

SJM65R600D

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

650

Gate-to-Source Voltage

±30

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

I_DM

E_AS

P_D

130

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

1.3

°C /W

MTM1474A: January 2024 [2.0]

www.gmesemi.com

12 3 4 5 6

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