Datasheet > SJ15N65M

SJ15N65M

更新时间： 2025-07-19 20:02:59

品牌	Logo	应用领域
晶恒 - JINGHENG		/
页数	文件大小	规格书
12页	5331K
描述
Configuration:Single; Ch:N; Vds(V):650; Id(A):15; Pd(W):151; Vgs(MAX)(V):±30; Vth(Min)(V):2.5; Vth(Max)(V):4.5; RDS(on)(typ)(Ω)@10V:0.25; Qg(typ)(nc)@10V:34; Ciss(typ)(pF):1050; OUTLINE:TO-252(DPAK);

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SJ15N65M 数据手册

SJ15N65 Series

650V N-Channel Super Junction Power MOSFET

S E M I C O N D U C T O R

Genaral Description

This series of power MOSFET use N channel Multi-EPI Super-

Junction technology and design to provide better characteristics,

such as fast switching time, low Ciss and Crss, low on resistance

and excellent avalanche characteristics,making it especially suitable

for applications which require superior power density

and outstanding efficiency.

Product Summary

VDS

RDS(on)(Ω)Typ

ID(A)

Qg(Typ)

34nc

0.25 @ 10V,7.5A

650V

Features

TO-220

ITO-220

TO-263

SJ15N65D

SJ15N65

SJ15N65F

Low on-resistance

Ultra low gate charge and input capacitance

100% avalanche tested

Rohs compliant

Mechanical Data

Case:TO-220,ITO-220,TO-263,TO-262,TO-251,TO-252,TO-263-7L Package

TO-262

TO-251

TO-252

TO-263-7L

SJ15N65E

SJ15N65N

SJ15N65M

SJ15N65D7

Application

Switching applications

Ordering Information

Package Type

TO-220

Package

Tube

Quality(box)

1000

Part No.

SJ15N65

Block Diagram

ITO-220

TO-263

Tube

SJ15N65F

SJ15N65D

SJ15N65E

SJ15N65N

SJ15N65M

SJ15N65D7

1000

Tape & Reel

800

Pin Definition:

TO-262

Tube

1000

1. Gate

2. Drain

TO-251

1000

3/4/5/6/7. Source

Tape & Reel

TO-252

3000

TO-263-7L

800

Table1 Absolute Maximum Ratings

Parameters

(TC=25℃,unless otherwise specified)

SJ15N65 SJ15N65M

SJ15N65N

Symbol

SJ15N65D

Unit

SJ15N65F

SJ15N65E SJ15N65D7

V_DS

V_GS

650

Drain-Source Voltage

Gate-Source Voltage

±30

TC=25°C

Contionous Drain Current

TC=100°C

I_D

I_DM

EAS

I_AR

Pulsed Drain Current (Note 1)

Single Pulse Avalanche Energy(Note 2)

Avalanche Current(Note 1)

280

2.8

V/ns

EAR

dv/dt

1.4

Repetitive Avalanche Energy(Note 1)

Reverse Diode Recovery dv/dt(Note 3)

Drain Source Voltage Slope (VDS=720V)

dv/dt

P_D

Power Dissipation

151

TC=25°C

Operating Junction and Storage

Temperature

TJ/TSTG

-55～+150

℃

JINAN JINGHENG ELECTRONICS CO., LTD.

12-1

HTTP://WWW.JINGHENG.CN

12 3 4 5 6 7...12

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与SJ15N65M相关器件

型号	品牌	获取价格	描述	数据表
SJ15N65N	JINGHENG	获取价格	Configuration:Single; Ch:N; Vds(V):650; Id(A)
SJ18N65	JINGHENG	获取价格	Configuration:Single; Ch:N; Vds(V):650; Id(A)
SJ18N65D	JINGHENG	获取价格	Configuration:Single; Ch:N; Vds(V):650; Id(A)
SJ18N65E	JINGHENG	获取价格	Configuration:Single; Ch:N; Vds(V):650; Id(A)
SJ18N65F	JINGHENG	获取价格	Configuration:Single; Ch:N; Vds(V):650; Id(A)
SJ18N65M	JINGHENG	获取价格	Configuration:Single; Ch:N; Vds(V):650; Id(A)
SJ18N65N	JINGHENG	获取价格	Configuration:Single; Ch:N; Vds(V):650; Id(A)
SJ192P	CONNOR-WINFIELD	获取价格	Oscillator
SJ192P-1.000MHZ	CONNOR-WINFIELD	获取价格	Oscillator, 1MHz Min, 50.999MHz Max, 1MHz Nom
SJ192P-FREQ-OUT23	CONNOR-WINFIELD	获取价格	CMOS/TTL Output Clock Oscillator, 1MHz Min, 50.999MHz Max

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