Datasheet > SIT1602AI-31-18E-50.000000

SIT1602AI-31-18E-50.000000

更新时间： 2025-07-18 19:31:59

品牌	Logo	应用领域
SITIME		石英晶振振荡器
页数	文件大小	规格书
16页	621K
描述
振荡器50MHzLVCMOSXO（标准）1.8V启用/禁用4-SMD，无引线

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SiT1602

Low Power, Standard Frequency Oscillator

The Smart Timing Choice



The Smart Timing Choice



Features

Applications

 51 standard frequencies between 3.75 MHz and 77.76 MHz

 100% pin-to-pin drop-in replacement to quartz-based XO

 Excellent total frequency stability as low as ±20 PPM

 Low power consumption of 3.6 mA typical

 Standby mode for longer battery life

 Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD,

GPON, EPON, etc

 Ideal for high-speed serial protocols such as: USB, SATA, SAS,

Firewire, 100M / 1G / 10G Ethernet, etc.

 Fast startup time of 5 ms

 LVCMOS/HCMOS compatible output

 Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,

7.0 x 5.0 mm x mm

 Instant samples with Time Machine II and field programmable

oscillators

 Pb-free, RoHS and REACH compliant

Electrical Characteristics^[1]

Parameter and Conditions

Output Frequency Range

Frequency Stability

Symbol

Min.

Typ.

Max.

Frequency Range

(Refer to the frequency list page 10) MHz

Frequency Stability and Aging

Unit

Condition

51 standard frequencies between 3.75 MHz and 77.76 MHz

F_stab

-20

-25

-50

–

+20

+25

+50

PPM

Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and

variations over operating temperature, rated power supply

voltage and load.

Operating Temperature Range

Supply Voltage

T_use

Vdd

-20

-40

–

+70

+85

°C

Extended Commercial

Industrial

Supply Voltage and Current Consumption

1.62

2.25

2.52

2.7

2.97

2.25

–

1.8

2.5

2.8

3.0

3.3

–

1.98

2.75

3.08

3.3

Contact SiTime for 1.5V support

3.63

4.5

Current Consumption

Idd

3.8

3.6

3.4

–

A

No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V

No load condition, f = 20 MHz, Vdd = 2.5V

–

4.2

–

3.9

No load condition, f = 20 MHz, Vdd = 1.8V

OE Disable Current

Standby Current

I_OD

I_std

–

Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down

Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down

ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down

ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down

ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down

–

3.8

–

2.6

1.4

0.6

4.3

–

2.5

–

1.3

LVCMOS Output Characteristics

Duty Cycle

–

All Vdds

Rise/Fall Time

Tr, Tf

Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%

Vdd =1.8V, 20% - 80%

–

1.3

–

2.5

–

Vdd = 2.25V - 3.63V, 20% - 80%

Output High Voltage

Output Low Voltage

VOH

VOL

90%

–

Vdd

IOH = -4 mA (Vdd = 3.0V or 3.3V)

IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)

IOH = -2 mA (Vdd = 1.8V)

–

10%

Vdd

IOL = 4 mA (Vdd = 3.0V or 3.3V)

IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)

IOL = 2 mA (Vdd = 1.8V)

Input Characteristics

Input High Voltage

VIH

VIL

70%

–

30%

100

–

Vdd

Pin 1, OE or ST

Input Low Voltage

–

Vdd

k

Pin 1, OE or ST

Input Pull-up Impedence

Z_in

–

Pin 1, OE logic high or logic low, or ST logic high

Pin 1, ST logic low

M

Note:

1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.

SiTime Corporation

Rev. 1.2

990 Almanor Avenue

Sunnyvale, CA 94085

(408) 328-4400

www.sitime.com

Revised March 26, 2015

12 3 4 5 6 7...16

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