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SISS30LDN-T1-GE3

更新时间： 2024-11-05 15:51:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 200K
描述
Power Field-Effect Transistor,

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SISS30LDN-T1-GE3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
Factory Lead Time：15 weeks风险等级：5.67
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SISS30LDN-T1-GE3 数据手册

 浏览型号SISS30LDN-T1-GE3的Datasheet PDF文件第2页浏览型号SISS30LDN-T1-GE3的Datasheet PDF文件第3页浏览型号SISS30LDN-T1-GE3的Datasheet PDF文件第4页浏览型号SISS30LDN-T1-GE3的Datasheet PDF文件第5页浏览型号SISS30LDN-T1-GE3的Datasheet PDF文件第6页浏览型号SISS30LDN-T1-GE3的Datasheet PDF文件第7页 
SiSS30LDN  
Vishay Siliconix  
www.vishay.com  
N-Channel 80 V (D-S) MOSFET  
FEATURES  
PowerPAK® 1212-8S  
D
8
• TrenchFET® Gen IV power MOSFET  
• Very low RDS x Qg figure-of-merit (FOM)  
• Tuned for the lowest RDS x Qoss FOM  
• 100 % Rg and UIS tested  
D
7
D
6
D
5
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
1
S
2
S
3
S
4
G
1
APPLICATIONS  
D
Top View  
Bottom View  
• Synchronous rectification  
• Primary side switch  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) max. () at VGS = 10 V  
80  
• DC/DC converter  
G
0.00850  
0.01220  
15.2  
• Solar micro inverter  
R
DS(on) max. () at VGS = 4.5 V  
• Motor drive switch  
Qg typ. (nC)  
ID (A)  
S
• Battery and load switch  
55.5  
N-Channel MOSFET  
Configuration  
Single  
• Industrial  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK 1212-8S  
SiSS30LDN-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
80  
20  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
V
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
55.5  
44  
16 b, c  
12.6 b, c  
120  
51.8  
4.3 b, c  
20  
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
L = 0.1 mH  
20  
57  
36  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
4.8 b, c  
3 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
21  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
26  
2.2  
°C/W  
Maximum junction-to-case (drain)  
1.7  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 70 °C/W  
g. TC = 25 °C  
S18-1280-Rev. A, 24-Dec-2018  
Document Number: 79691  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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