Datasheet > SIS2366NT1G

SIS2366NT1G

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	603K
描述
Dual N-Channel MOSFET

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中文翻译

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数据手册

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SIS2366NT1G 数据手册

SMD Type

MOSFET

Dual N-Channel MOSFET

SIS2366NT1G

(

)

Unit: mm

SOT-23-6

+0.1

-0.1

0.4

Features

Super high dense cell trench design for low RDS(on).

Rugged and reliable.

Surface Mount package.

+0.02

-0.02

0.15

+0.01

-0.01

+0.2

-0.1

D1/D2

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

VDS

VGS

Gate-Source Voltage

4.3

Drain Current-Continuous @ TA = 25

-Pulse *2

Drain-Source Diode Forward Current *1

IDM

21.5

1.7

1.25

0.625

Maximum Power Dissipation TA=25 *1

TA=75

Operating Junction and Storage Temperature Range

Thermal Resistance,Junction-to-Ambient

TJ,TSTG

RthJA

- 55 to 150

100

*1 Surface Mounted on FR4 Board , t

10sec .

*2 Pulse width limited by maximum junction temperature.

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