Datasheet > SIL08N02

SIL08N02

更新时间： 2023-12-06 20:01:00

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
5页	1174K
描述
Tape&Reel:3Kpcs/Reel;

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数据手册

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SIL08N02 数据手册

SIL08N02

Features

•

Trench Power LV MOSFET Technology

High Power and Current Handing Capability

Epoxy Meets UL 94 V-0 Flammability Rating

Moisture Sensitivity Level 1

N-CHANNEL

Halogen Free Available Upon Request By Adding Suffix "-HF"

MOSFET

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

Thermal Resistance: 83°C/W Junction to Ambient ⁽¹⁾

SOT23-6L

•

Parameter

Rating

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Volltage

V_GS

±10

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current

6.4

Pulsed Drain Current ⁽²⁾

Total Power Dissipation

Note:

I_DM

P_D

1.5

1. Device Mounted on FR-4 PCB, 1 Square Inch Pad of 2 oz Copper.

2. Pulse Test: Pulse Width≤300µs,Duty Cycle ≤2%.

DIMENSIONS

MIN MAX MIN MAX

0.012 0.020 0.30 0.50

0.051 0.070 1.30 1.80

0.087 0.126 2.20 3.20

INCHES

Internal Structure and Marking Code

DIM

NOTE

0.037

0.074

0.95

1.90

TYP.

0.106 0.122 2.70 3.10

0.002 0.006 0.05 0.15

0.030 0.051 0.75 1.30

0.012 0.024 0.30 0.60

0.003 0.008 0.08 0.22

8N02

Rev.3-4-04092022

1/5

MCCSEMI.COM

12 3 4 5

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