Datasheet > SiHW30N60E

SiHW30N60E

更新时间： 2024-09-24 14:55:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	143K
描述
E Series Power MOSFET

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SiHW30N60E 数据手册

SiHW30N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

)

TO-247AD

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

N-Channel MOSFET

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

- High-intensity discharge (HID)

- Fluorescent ballast lighting

- LED lighting

R_DS(on)max. at 25 °C ()

V_GS= 10 V

0.125

Q_gmax. (nC)

130

_gs(nC)

_gd(nC)

• Industrial

- Welding

Configuration

Single

- Induction heating

- Motor drives

• Battery chargers

• Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

TO-247AD

Lead (Pb)-free and Halogen-free

SiHW30N60E-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

690

W/°C

Single Pulse Avalanche Energy b

Maximum Power Dissipation

E_AS

P_D

250

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

T_J, T_stg

-55 to +150

°C

_DS= 0 V to 80 % V_DS

dV/dt

V/ns

°C

Reverse Diode dV/dt d

Soldering Recommendations (Peak Temperature) ^c

for 10 s

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 7 A

c. 1.6 mm from case

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C

S22-0431-Rev. D, 16-May-2022

Document Number: 91525

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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