Datasheet > SIHG24N65E-E3

SIHG24N65E-E3

更新时间： 2024-11-25 12:03:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	182K
描述
E Series Power MOSFET

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SIHG24N65E-E3 数据手册

SiHG24N65E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low Figure-of-Merit (FOM) R_onx Q_g

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_gmax. (nC)

700

• Low Input Capacitance (C_iss

)

V_GS= 10 V

0.145

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q_g)

122

_gs(nC)

_gd(nC)

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions please see

www.vishay.com/doc?99912

Configuration

Single

APPLICATIONS

TO-247AC

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

• Industrial

N-Channel MOSFET

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

- Renewable Energy

- Solar (PV Inverters)

ORDERING INFORMATION

Package

TO-247AC

SiHG24N65E-E3

SiHG24N65E-GE3

Lead (Pb)-free

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

650

Gate-Source Voltage

V_GS

Gate-Source Voltage AC (f > 1 Hz)

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

508

W/°C

E_AS

P_D

Maximum Power Dissipation

250

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^d

T_J, T_stg

- 55 to + 150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

300^c

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 6 A.

c. 1.6 mm from case.

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S12-3104-Rev. F, 24-Dec-12

Document Number: 91476

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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SIHG24N65E-E3 替代型号

型号	品牌	替代类型	描述	数据表
SIHG24N65E-GE3	VISHAY	完全替代	E Series Power MOSFET

与SIHG24N65E-E3相关器件

型号	品牌	获取价格	描述	数据表
SiHG24N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SIHG24N65E-GE3	VISHAY	获取价格	E Series Power MOSFET
SiHG24N80AE	VISHAY	获取价格	E Series Power MOSFET
SiHG24N80AEF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHG25N40D	VISHAY	获取价格	D Series Power MOSFET
SiHG25N50E	VISHAY	获取价格	E Series Power MOSFET
SiHG25N60EFL	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode and Low Gate Charge
SiHG28N60EF	VISHAY	获取价格	EF Series Power MOSFET with Fast Body Diode
SiHG28N65E	VISHAY	获取价格	E Series Power MOSFET
SiHG28N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode

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