IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
- 50
•
•
Surface Mountable (Order as IRFR9010, SiHFR9010)
Straight Lead Option (Order as IRFU9010, SiHFU9010)
R
DS(on) (Ω)
VGS = - 10 V
0.50
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
Qg (Max.) (nC)
9.1
3.0
5.9
Q
Q
gs (nC)
gd (nC)
• Simple Drive Requirements
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
Configuration
Single
DESCRIPTION
S
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
DPAK
IPAK
(TO-252)
(TO-251)
G
D
D
The Power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
S
G
S
D
G
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
Power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
D
P-Channel MOSFET
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, dc-to-dc converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
DPAK (TO-252)
SiHFR9010-GE3
IRFR9010PbF
SiHFR9010-E3
IRFR9010
DPAK (TO-252)
SiHFR9010TR-GE3a
IRFR9010TRPbFa
SiHFR9010T-E3a
IRFR9010TRa
DPAK (TO-252)
IPAK (TO-251)
SiHFU9010-GE3
IRFU9010PbF
SiHFU9010-E3
IRFU9010
SiHFR9010TRL-GE3a
IRFR9010TRLPbFa
SiHFR9010TL-E3a
IRFR9010TRLa
Lead (Pb)-free
SnPb
SiHFR9010
SiHFR9010Ta
SiHFR9010TLa
SiHFU9010
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 50
20
V
TC = 25 °C
TC = 100 °C
- 5.3
- 3.3
- 21
Continuous Drain Current
V
GS at - 10 V
ID
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
0.20
136
- 5.3
2.5
25
5.8
W/°C
mJ
A
mJ
W
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
TC = 25 °C
V/ns
- 55 to + 150
300
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 Ω, peak IL = - 5.3 A.
c. ISD ≤ - 5.3 A, dI/dt ≤ - 80 A/μs, VDD ≤ 40 V, TJ ≤ 150 °C, suggested Rg = 24 Ω.
d. 0.063" (1.6 mm) from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91378
S10-1135-Rev. C, 10-May-10
www.vishay.com
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