Datasheet > SIHFR224T-E3A

SIHFR224T-E3A

更新时间： 2024-10-17 12:14:51

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	3373K
描述
Power MOSFET

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数据手册

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SIHFR224T-E3A 数据手册

IRFR224, IRFU224, SiHFR224, SiHFU224

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

250

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= 10 V

1.1

RoHS*

• Surface Mount (IRFR224/SiHFR224)

• Straight Lead (IRFU224/SiHFU224)

• Available in Tape and Reel

• Fast Switching

COMPLIANT

Q_g(Max.) (nC)

2.7

_gs(nC)

Q_gd(nC)

7.8

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs form Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave solderig techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR224TRLPbF^a

SiHFR224TL-E3^a

IRFR224TRL^a

IPAK (TO-251)

IRFU224PbF

SiHFU224-E3

IRFU224

IRFR224PbF

SiHFR224-E3

IRFR224

IRFR224TRPbF^a

SiHFR224T-E3^a

IRFR224TR^a

Lead (Pb)-free

SnPb

SiHFR224

SiHFR224T^a

SiHFR224TL^a

SiHFU224

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

250

V_GS

T_C= 25 °C

3.8

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

2.4

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

130

3.8

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

I_AR

E_AR

4.2

T_C= 25 °C

T_A= 25 °C

P_D

2.5

dV/dt

4.8

V/ns

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