Datasheet > SIHF9540STL-E3A

SIHF9540STL-E3A

更新时间： 2024-11-25 02:52:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	203K
描述
Power MOSFET

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SIHF9540STL-E3A 数据手册

IRF9540S, SiHF9540S

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

• Fast Switching

• Compliant to RoHS Directive 2002/95/EC

- 100

V_GS= - 10 V

R_DS(on)()

0.20

Q_g(Max.) (nC)

_gs(nC)

_gd(nC)

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

D²PAK (TO-263)

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface mount

package. The D²PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

P-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHF9540S-GE3

IRF9540SPbF

SiHF9540S-E3

SiHF9540STRL-GE3^a

IRF9540STRLPbF^a

SiHF9540STL-E3^a

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

- 100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C= 100 °C

- 19

- 13

Continuous Drain Current

V_GSat - 10 V

I_D

Pulsed Drain Current^a

I_DM

- 72

Linear Derating Factor

1.0

0.025

640

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

- 19

Repetitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

150

3.7

- 5.5

- 55 to + 175

300^d

_C= 25 °C

P_D

V/ns

°C

dV/dt

T_J, T_stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 2.7 mH, R_g= 25 , I_AS= - 19 A (see fig. 12).

c. I_SD - 19 A, dI/dt  200 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material)

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91079

S11-1051-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与SIHF9540STL-E3A相关器件

型号	品牌	获取价格	描述	数据表
SIHF9540STRL-GE3	VISHAY	获取价格	TRANSISTOR 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
SIHF9540STRL-GE3A	VISHAY	获取价格	Power MOSFET
SIHF9610	VISHAY	获取价格	Power MOSFET
SIHF9610-E3	VISHAY	获取价格	Power MOSFET
SIHF9610S-E3	VISHAY	获取价格	TRANSISTOR 1.8 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO
SIHF9610STRL-GE3	VISHAY	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
SIHF9620	VISHAY	获取价格	Power MOSFET
SIHF9620-E3	VISHAY	获取价格	Power MOSFET
SIHF9620S-E3	VISHAY	获取价格	TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF9620S-GE3	VISHAY	获取价格	TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND

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