SIHF730AL

更新时间： 2024-11-19 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	166K
描述
Power MOSFET

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中文翻译

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数据手册

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SIHF730AL 数据手册

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

Vishay Siliconix

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

400

Available

R_DS(on)(Max.) (Ω)

Q_g(Max.) (nC)

V_GS= 10 V

1.0

RoHS*

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

COMPLIANT

5.8

_gs(nC)

_gd(nC)

• Fully Characterized Capacitance and Avalanche Voltage

and Current

9.3

• Effective C_ossSpecified

• Lead (Pb)-free Available

Configuration

Single

D²PAK (TO-263)

I²PAK (TO-262)

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Sspeed Power Switching

TYPICAL SMPS TOPOLOGIES

N-Channel MOSFET

• Single Transistor Flyback Xfmr. Reset

• Single Transistor Forward Xfmr. Reset

(Both US Line Input Only)

ORDERING INFORMATION

Package

D²PAK (TO-263)

I²PAK (TO-262)

IRF730ASPbF

SiHF730AS-E3

IRF730AS

IRF730ASTRLPbF^a

SiHF730ASTL-E3^a

IRF730ASTRL^a

IRF730ASTRRPbF^a

SiHF730ASTR-E3^a

IRF730ALPbF

Lead (Pb)-free

SiHFL014T-E3

SnPb

SiHF730AS

SiHF730ASTL^a

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

400

_C= 25 °C

5.5

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

3.5

Pulsed Drain Current^{a, e}

I_DM

0.6

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

E_AS

I_AR

290

5.5

Repetiitive Avalanche Energy^a

E_AR

7.4

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^{c, e}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

dV/dt

T_J, T_stg

4.6

V/ns

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 19 mH, R_G= 25 Ω, I_AS= 5.5 A (see fig. 12).

c. I_SD≤ 5.5 A, dI/dt ≤ 90 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRF730A/SiHF730A data and test condition

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91046

S-Pending-Rev. A, 30-May-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与SIHF730AL相关器件

型号	品牌	获取价格	描述	数据表
SIHF730AL-E3	VISHAY	获取价格	TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO
SIHF730AL-GE3	VISHAY	获取价格	TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND R
SIHF730AS	VISHAY	获取价格	Power MOSFET
SIHF730AS-E3	VISHAY	获取价格	Power MOSFET
SIHF730AS-GE3	VISHAY	获取价格	TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND R
SIHF730ASTL	VISHAY	获取价格	Power MOSFET
SIHF730ASTL-E3	VISHAY	获取价格	Power MOSFET
SIHF730ASTR-E3	VISHAY	获取价格	Power MOSFET
SIHF730-E3	VISHAY	获取价格	Power MOSFET
SIHF730S-E3	VISHAY	获取价格	TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SMD-220, 3 P

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