SIHF710

更新时间： 2024-11-24 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1020K
描述
Power MOSFET

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中文翻译

获取价格

数据手册

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SIHF710 数据手册

IRF710, SiHF710

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

400

Available

• Repetitive Avalanche Rated

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

3.6

RoHS*

Q_g(Max.) (nC)

3.4

COMPLIANT

_gs(nC)

_gd(nC)

• Ease of Paralleling

8.5

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

TO-220

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF710PbF

SiHF710-E3

IRF710

Lead (Pb)-free

SnPb

SiHF710

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

400

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

2.0

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

1.2

Pulsed Drain Current^a

I_DM

6.0

Linear Derating Factor

0.29

120

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

2.0

E_AR

3.6

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 52 mH, R_G= 25 Ω, I_AS= 2.0 A (see fig. 12).

c. I_SD≤ 2.0 A, dI/dt ≤ 40 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91041

S-Pending-Rev. A, 30-May-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与SIHF710相关器件

型号	品牌	获取价格	描述	数据表
SIHF710-E3	VISHAY	获取价格	Power MOSFET
SIHF710S	VISHAY	获取价格	TRANSISTOR 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, F
SIHF710S-GE3	VISHAY	获取价格	TRANSISTOR 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND R
SIHF710STL-E3	VISHAY	获取价格	TRANSISTOR 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO
SIHF710STR	VISHAY	获取价格	TRANSISTOR 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, F
SIHF710STR-E3	VISHAY	获取价格	TRANSISTOR 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO
SIHF710STRL-GE3	VISHAY	获取价格	TRANSISTOR 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND R
SIHF720	VISHAY	获取价格	Power MOSFET
SIHF720-E3	VISHAY	获取价格	Power MOSFET
SIHF720L-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Met

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