Datasheet > SiHF6N65E

SiHF6N65E

更新时间： 2024-11-25 14:52:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	176K
描述
E Series Power MOSFET

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中文翻译

获取价格

数据手册

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SiHF6N65E 数据手册

SiHF6N65E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

TO-220 FULLPAK

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

700

R_DS(on)max. () at 25 °C

V_GS= 10 V

0.6

Q_gmax. (nC)

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

_gs(nC)

_gd(nC)

Configuration

Single

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

TO-220 FULLPAK

SiHF6N65E-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

650

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

0.63

W/°C

Single Pulse Avalanche Energy ^b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

E_AS

P_D

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

dV/dt

V/ns

Soldering Recommendations (Peak temperature) ^c

For 10 s

300

0.6

°C

Mounting Torque

M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 2 A.

c. 1.6 mm from case.

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

e. Limited by maximum junction temperature.

S16-1602-Rev. C, 15-Aug-16

Document Number: 91547

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiHF6N65E相关器件

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