Datasheet > SiHF6N40D

SiHF6N40D

更新时间： 2024-10-15 14:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	176K
描述
D Series Power MOSFET

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SiHF6N40D 数据手册

SiHF6N40D

Vishay Siliconix

www.vishay.com

D Series Power MOSFET

FEATURES

• Optimal design

TO-220 FULLPAK

- Low area specific on-resistance

- Low input capacitance (C_iss

)

Available

- Reduced capacitive switching losses

- High body diode ruggedness

- Avalanche energy rated (UIS)

• Optimal efficiency and operation

- Low cost

- Simple gate drive circuitry

- Low figure-of-merit (FOM): R_onx Q_g

- Fast switching

N-Channel MOSFET

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

450

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.



R_DS(on)max. () at 25 °C

V_GS= 10 V

1.0



Q_gmax. (nC)

_gs(nC)

_gd(nC)

APPLICATIONS

Configuration

Single

• Consumer electronics

- Displays (LCD or plasma TV)

• Server and telecom power supplies

- SMPS

• Industrial

- Welding

- Induction heating

- Motor drives

• Battery chargers

ORDERING INFORMATION

Package

TO-220 FULLPAK

SiHF6N40D-E3

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

V_DS

400

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

0.24

104

W/°C

Single Pulse Avalanche Energy ^b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

Soldering Recommendations (Peak temperature) ^c

E_AS

P_D

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

dV/dt

V/ns

0.48

300

For 10 s

°C

Mounting Torque

M3 screw

0.6

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.3 mH, R_g= 25 , I_AS= 9.5 A.

c. 1.6 mm from case.

d. I_SD I_D, starting T_J= 25 °C.

e. Limited by maximum junction temperature.

S16-1602-Rev. B, 15-Aug-16

Document Number: 91501

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiHF6N40D相关器件

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SIHF710STRL-GE3	VISHAY	获取价格	TRANSISTOR 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND R
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