Datasheet > SIHF624

SIHF624

更新时间： 2024-11-06 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	150K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHF624 数据手册

IRF624, SiHF624

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

250

Available

• Repetitive Avalanche Rated

• Fast Switching

R_DS(on)(Ω)

Q_g(Max.) (nC)

Q_gs(nC)

V_GS= 10 V

1.1

RoHS*

2.7

COMPLIANT

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

_gd(nC)

7.8

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF624PbF

SiHF624-E3

IRF624

Lead (Pb)-free

SnPb

SiHF624

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

250

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

4.4

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

2.8

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.40

100

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

4.4

E_AR

5.0

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.8

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 8.3 mH, R_G= 25 Ω, I_AS= 4.4 A (see fig. 12).

c. I_SD≤ 4.4 A, dI/dt ≤ 90 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91029

S-Pending-Rev. A, 19-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

下载PDF

与SIHF624相关器件

型号	品牌	获取价格	描述	数据表
SIHF624-E3	VISHAY	获取价格	Power MOSFET
SIHF624S	VISHAY	获取价格	TRANSISTOR 4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3,
SIHF624S-E3	VISHAY	获取价格	TRANSISTOR 4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF630	KERSEMI	获取价格	Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated
SIHF630	VISHAY	获取价格	Power MOSFET
SIHF630-E3	KERSEMI	获取价格	Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated
SIHF630-E3	VISHAY	获取价格	Power MOSFET
SIHF630S	VISHAY	获取价格	TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, SMD-220, 3 PIN, FET General
SIHF630S-E3	VISHAY	获取价格	TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SMD-220, 3 P
SIHF630S-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power