Datasheet > SIGC42T170R2C

SIGC42T170R2C

更新时间： 2024-10-26 03:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
4页	71K
描述
IGBT Chip in NPT-technology

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SIGC42T170R2C 数据手册

SIGC42T170R2C

IGBT Chip in NPT-technology

FEATURES:

1700V NPT technology

280µm chip

positive temperature coefficient

easy paralleling

This chip is used for:

chip only

Applications:

drives

integrated gate resistor

Chip Type

V_CE

I_Cn

Die Size

Package

Ordering Code

Q67050-A4117-

A003

6.51 x 6.51 mm²

sawn on foil

SIGC42T170R2C

1700V 17A

MECHANICAL PARAMETER:

mm²

Raster size

6.51 x 6.51

42.38 / 23.8

2x( 1.7x3.2)

1.2 x 1.2

280

Area total / active

Emitter pad size

Gate pad size

Thickness

µm

deg

Wafer size

150

Flat position

Max.possible chips per wafer

Passivation frontside

Emitter metalization

328 pcs

Photoimide

3200 nm Al Si 1%

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metalization

Die bond

electrically conductive glue or solder

Wire bond

Al, £500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI PS DD HV3, L 7341M, Edition 2, 04.09.2003

12 3 4

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