Datasheet > SIGC06T60GE

SIGC06T60GE

更新时间： 2024-11-21 20:10:19

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
5页	112K
描述
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel,

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技术参数
数据手册

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SIGC06T60GE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.6
最大集电极电流 (IC)：	10 A	集电极-发射极最大电压：	600 V
门极发射器阈值电压最大值：	6.5 V	门极-发射极最大电压：	20 V
最高工作温度：	150 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	子类别：	Insulated Gate BIP Transistors
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SIGC06T60GE 数据手册

SIGC06T60GE

IGBT³Chip

Features:

This chip is used for:

•

600V Trench & Field Stop technology

•

power module

discrete components

low V_CE(sat)

low turn-off losses

short tail current

Applications:

•

drives

white goods

resonant applications

positive temperature coefficient

easy paralleling

Chip Type

V_CE

600V 10A

I_C

Die Size

2.44 x 2.42 mm²

Package

SIGC06T60GE

Sawn on foil

Mechanical Parameters

Raster size

2.44 x 2.42

Emitter pad size (incl. gate pad)

Gate pad size

1.558 x 1.577

mm²

0.361 x 0.513

Area total

5.9

Thickness

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

4717

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Die bond

suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

0.65mm ; max 1.2mm

Store in original container, in dry nitrogen, in dark

Recommended storage environment

environment, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies, IMM PSD, L7521L, Edition 2.1, 07.07.2010

12 3 4 5

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