深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF50N060
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS ■LOW GATE
CHARGE FOR FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT
●应用:低压高频逆变电路 同步整流 开关
●APPLICATION: ■LOW VOLTAGE,HIGH FREQUENCY INVERTERS
■PRIMARY SWITCH
■SYNCHRONOUS RECTIFIER
●最大额定值(TC=25C)
●Absolute Maximum Ratings(Tc=25C) TO-220/220FP/262/263
参数
PARAMETER
漏-源电压
符号
SYMBOL
额定值
VALUE
单位
UNIT
VDS=60V
VDS
VGS
60
V
V
Drain-source Voltage
RDS(ON)=10mΩ
ID=50A
栅-源电压
gate-source Voltage
漏极电流
±20
Continuous Drain Current
TC=25℃
ID
50*
A
①
Others:120
耗散功率
Total Power Dissipation ①
Ptot
W
TO-220FP:40
最高结温
Junction Temperature
存储温度
Tj
150
C
C
TSTG
-55-175
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
②
EAS
170
mJ
●电特性(Tc=25C)
●Electronic Characteristics(Tc=25C)
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值
MAX
单位
UNIT
漏-源击穿电压
Drain-source Breakdown Voltage
栅极开启电压
BVDSS
VGS(TH)
VGS=0V, ID=250A
60
68
V
V
VGS=VDS, ID=250A
1.2
1.8
2.2
1
Gate Threshold Voltage
VDS =60V,
VGS =0V, Tj=25C
VDS =60V,
A
A
漏-源漏电流
Drain-source Leakage Current
IDSS
10
VGS =0V, Tj=125C
栅极漏电流
Gate-body Leakage
Current
IGSS
VGS =±20V ,VDS =0V
±100
nA
漏-源导通电阻
Static Drain-source On
Resistance
跨导
Forwad Transconductance
VGS =10V, ID=9A
VGS =4.5V, ID=6A
10
12
13
15
RDS(ON)
gFS
mΩ
VDS =5V, ID=9A
18
S
●订单信息/ORDERING INFORMATION:
订货编码/ORDERING CODE
包装形式/PACKING
普通塑封料
Normal Package Material
无卤塑封料
Halogen Free
SIF50N060 TO-220-TU 或
TO-220FP-TU
SIF50N060 TO-220-TU-HF 或
TO-220FP-TU-HF
TO-220&220FP 条管装/TUBE PACKING
SIF50N060 TO-262-TU 或
SIF50N060 TO-263-TU
SIF50N060 TO-262-TU-HF 或
SIF50N060 TO-263-TU-HF
TO-262 或 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
SIF50N060 TO-263-TR
SIF50N060 TO-263-TR-HF
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Si semiconductors 2016.12