深圳深爱半导体股份有限公司
产品规格书
Shenzhen SI Semiconductors Co., LTD.
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF50N030
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS ■LOW GATE
CHARGE FOR FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT
●应用:负载开关 电池保护
●APPLICATION: ■LOAD SWITCH
●最大额定值(TC=25C)
■BATTERY PROTECTION
●Absolute Maximum Ratings(Tc=25C)
TO-251S/251/252/252T
单位
UNIT
参数
PARAMETER
符号
额定值
SYMBOL VALUE
漏-源电压
Drain-source Voltage
VDS
VGS
30
V
V
栅-源电压
gate-source Voltage
±20
漏极电流
Continuous Drain Current
TC=25℃
ID
50*
A
①
耗散功率
Total Power Dissipation ①
Ptot
Tj
56*
150
W
C
C
最高结温
Junction Temperature
存储温度
Storage Temperature
TSTG
-55-150
单脉冲雪崩能量
Single Pulse Avalanche Energy
②
EAS
88
mJ
●电特性(Tc=25C)
●Electronic Characteristics(Tc=25C)
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值
MAX
单位
UNIT
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS(TH)
VGS=0V, ID=250A
30
10
V
V
栅极开启电压
Gate Threshold Voltage
VGS=VDS, ID=250A
1.6
3.0
1
VDS =30V,
VGS =0V, Tj=25C
A
漏-源漏电流
Drain-source Leakage Current
IDSS
VDS =24V,
VGS =0V, Tj=125C
10
A
栅极漏电流
Gate-body Leakage
Current
IGSS
VGS =±20V ,VDS =0V
±100
nA
VGS =4.5V, ID=20A
VGS =10V, ID=30A
VDS =10V, ID=5A
10.5
7.0
25
14
10
mΩ
mΩ
S
漏-源导通电阻
Static Drain-source On
Resistance
RDS(ON)
跨导
Forward Transconductance
gFS
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
SIF50N030 TO-251-TU-HF 或
TO-251S-TU-HF 或
TO-252(T)&251(S)条管装
TUBE PACKING
SIF50N030 TO-251-TU 或 TO-251S-TU
或 TO-252(T)-TU
TO-252(T)-TU-HF
TO-252(T) 编带装
TAPE & REEL PACKING
SIF50N030 TO-252(T)-TR
SIF50N030 TO-252(T)-TR-HF
1
Si semiconductors 2017.03