Datasheet > SIDC85D170H_04

SIDC85D170H_04

更新时间： 2024-09-16 09:25:35

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关
页数	文件大小	规格书
4页	67K
描述
Fast switching diode chip in EMCON 3 -Technology

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SIDC85D170H_04 数据手册

SIDC85D170H

Fast switching diode chip in EMCON 3-Technology

FEATURES:

This chip is used for:

1700V EMCON 3 technology 200 µm chip

soft, fast switching

low reverse recovery charge

small temperature coefficient

EUPEC power modules

Applications:

resonant applications, drives

Chip Type

V_R

I_F

Die Size

9.2 x 9.2 mm²

Package

Ordering Code

Q67050-A4178-

A001

SIDC85D170H

1700V 150A

sawn on foil

MECHANICAL PARAMETER:

Raster size

9.2 x 9.2

84.64 / 67.8

7.18 x 7.18

200

mm²

Area total / active

Anode pad size

Thickness

µm

deg

Wafer size

150

Flat position

180

Max. possible chips per wafer

Passivation frontside

Anode metallization

160 pcs

Photoimide

3200 nm Al Si Cu

Ni Ag –system

Cathode metallization

Die bond

suitable for epoxy and soft solder die bonding

electrically conductive glue or solder

Wire bond

Al, £500µm

Reject Ink Dot Size

Æ 0.65mm; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI DP PSD CLS, L 4491A, Edition 2, 2.11.2004

12 3 4

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