Datasheet > SIDC81D120H8X1SA3

SIDC81D120H8X1SA3

更新时间： 2024-11-26 05:51:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
4页	40K
描述
Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon, DIE-1

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SIDC81D120H8X1SA3 数据手册

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SIDC81D120H8

Fast switching diode chip in Emitter Controlled -Technology

This chip is used for:

Features:

•

EUPEC power modules and

discrete devices

•

1200V Emitter Controlled technology

120 µm chip

soft, fast switching

low reverse recovery charge

small temperature coefficient

•

Applications:

SMPS, resonant applications,

•

drives

Chip Type

V_R

I_F

Die Size

Package

9 x 9 mm²

sawn on foil

SIDC81D120H8

1200V 150A

Mechanical Parameters

Raster size

9 x 9

mm²

Area total

8.046 x 8.046

120

Anode pad size

Thickness

µm

Wafer size

200

Max. possible chips per wafer

Passivation frontside

Pad metal

315

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Die bond

suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Wire bond

Al, ≤500µm

Reject ink dot size

0.65mm ; max 1.2mm

Store in original container, in dry nitrogen, in dark

environment, < 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies, IMM PSD, L4061C, Edition 1.2, 08.07.10

12 3 4

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