SICW028N120A4
Features
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SiC MOSFET Technology
High Blocking Voltage with Low On-resistance
Avalanche Ruggedness
Halogen Free. “Green” Device (Note 1)
Epoxy Meets UL 94 V-0 Flammability Rating
N-CHANNEL
Lead Free Finish/RoHS Compliant (Note2)("P" Suffix Designates
RoHS Compliant. See Ordering Information)
MOSFET
Maximum Ratings
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Operating Junction Temperature Range : -55°C to +175°C
Storage Temperature Range: -55°C to +175°C
Thermal Resistance: 0.4°C/W Junction to Case
Applications
TO-247-4
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Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC Converters
Battery Chargers
Motor Drives
Parameter
Rating
1200
-5/+22
-3/+18
80
Symbol
VDS
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage
b2
VGSmax
VGSop
V
V
4
1
2
3
Tc=25oC
Continuous Drain Current
ID
A
VGS=18V
Tc=110oC
52
DIMENSIONS
Pulsed Drain Current (Note 3)
Single Pulse Avalanche Energy (Note4)
IDM
320
A
INCHES
MIN MAX
MM
MAX
DIM
NOTE
1620
mJ
EAS
MIN
A
A1
A2
b
b1
b2
c
D
D1
E
0.190 0.205 4.80
0.090 0.100 2.29
0.075 0.082 1.88
0.042 0.052 1.10
0.093 0.108 2.35
0.094 0.112 2.39
0.022 0.027 0.55
0.917 0.929 23.30 23.60
0.640 0.663 16.25 16.85
0.620 0.632 15.75 16.05
0.543 0.559 13.80 14.20
5.20
2.50
2.08
1.36
2.75
2.84
0.70
Tc=25oC
375
162
Total Power Dissipation
PD
W
Tc=110oC
Notes:
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2. High Temperature Solder Exemptions Applied, see EU Directive Annex 7a.
3. Pulse Test: Pulse Width Limited by Tjmax.
4. EAS Condition: Starting TJ=25°C, VDD=50V, VGS=20V, Rg=25Ω, L=10mH.
E1
E2
e
0.173 0.201
4.4
5.10
Internal Structure
0.100
2.54
Drain (Pin 1)
L
0.683 0.695 17.34 17.64
L1
P
Q
0.157 0.169 4.0
0.138 0.144 3.51
0.220 0.236 5.60
0.238 0.248 5.60
4.3
MCC
SICW
028N120A4
3.75
6.00
6.30
Φ
YYWW
S
Gate
(Pin 4)
Driver Source
(Pin 3)
Power Source
(Pin 2)
4
1
2
3
Rev.4-1-09152023
1/6
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