Datasheet > SIB912DK

SIB912DK

更新时间： 2024-11-12 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	232K
描述
Dual N-Channel 20-V MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIB912DK 数据手册

New Product

SiB912DK

Vishay Siliconix

Dual N-Channel 20-V MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^{a, g}

1.5

TrenchFET^®Power MOSFET

0.216 at V_GS= 4.5 V

0.268 at V_GS= 2.5 V

0.375 at V_GS= 1.8 V

New Thermally Enhanced PowerPAK^®

SC-75 Package

RoHS

1.5

1.2 nC

COMPLIANT

- Small Footprint Area

- Low On-Resistance

1.0

APPLICATIONS

•

Load Switch, PA Switch and Battery Switch for Portable

Devices

PowerPAK SC75-6L-Dual

•

DC/DC Converter

S₁

Marking Code

G₁

D₁

D₂

C A X

X X X

Part # code

D₁

D₂

Lot Traceability

and Date code

G₂

1.60 mm

S₂

Ordering Information: SiB912DK-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

Unit

V_GS

1.5^a

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

1.5^{a, b, c}

T_A= 25 °C

T_A= 70 °C

1.4^{b, c}

1.5^a

0.9^{b, c}

3.1

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Source-Drain Diode Current

2.0

P_D

Maximum Power Dissipation

1.1^{b, c}

0.7^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

115

Unit

t ≤ 5 s

°C/W

R_thJC

Steady State

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 125 °C/W.

g. Based on T_C= 25 °C.

Document Number: 68883

S-82022-Rev. A, 01-Sep-08

www.vishay.com

12 3 4 5 6 7...9

中文翻译

下载PDF

与SIB912DK相关器件

型号	品牌	获取价格	描述	数据表
SIB912DK-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V MOSFET
SIB914DK	VISHAY	获取价格	Dual N-Channel 1.2-V (G-S) MOSFET
SIB914DK-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 8V 1.5A 6-Pin PowerPAK SC-75 T/R
SIBC-102-02-F-S	SAMTEC	获取价格	Card Edge Connector, 2 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
SIBC-103-02-F-S	SAMTEC	获取价格	Card Edge Connector, 3 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal,
SIBC-104-02-F-S	SAMTEC	获取价格	Card Edge Connector, 4 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
SIBC-105-02-F-S	SAMTEC	获取价格	Card Edge Connector, 5 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal,
SIBC-106-02-F-S	SAMTEC	获取价格	Card Edge Connector, 6 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
SIBC-107-02-F-S	SAMTEC	获取价格	Card Edge Connector, 7 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal,
SIBC-113-02-F-S	SAMTEC	获取价格	Card Edge Connector, 13 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal

与SIB912DK相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

SIB912DK

SIB912DK 数据手册

与SIB912DK相关器件

与SIB912DK相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIB912DK

SIB912DK 数据手册

与SIB912DK相关器件

与SIB912DK相关文章

您还可以找

您在本页遇到什么问题？