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SI8901DB-T2-E1 PDF预览

SI8901DB-T2-E1

更新时间: 2024-11-09 20:08:43
品牌 Logo 应用领域
威世 - VISHAY 晶体管
页数 文件大小 规格书
6页 93K
描述
Small Signal Field-Effect Transistor, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO FOOT, 6 PIN

SI8901DB-T2-E1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:GRID ARRAY, R-PBGA-B6针数:6
Reach Compliance Code:compliant风险等级:5.64
配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODEFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PBGA-B6JESD-609代码:e1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:GRID ARRAY
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:BALL
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

SI8901DB-T2-E1 数据手册

 浏览型号SI8901DB-T2-E1的Datasheet PDF文件第2页浏览型号SI8901DB-T2-E1的Datasheet PDF文件第3页浏览型号SI8901DB-T2-E1的Datasheet PDF文件第4页浏览型号SI8901DB-T2-E1的Datasheet PDF文件第5页浏览型号SI8901DB-T2-E1的Datasheet PDF文件第6页 
Si8901DB  
Vishay Siliconix  
New Product  
Bi-Directional P-Channel 20-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D Ultra-Low rSS(on)  
D New MICRO FOOTr Chipscale Packaging Reduces  
Footprint Area, Profile (0.65 mm) and On-Resistance  
Per Footprint Area  
VS1S2 (V)  
rS1S2(on) (W)  
IS1S2 (A)  
0.060 @ V = 4.5 V  
4.4  
3.9  
3.4  
GS  
20  
0.080 @ V = 2.5  
V
V
GS  
APPLICATIONS  
0.105 @ V = 1.8  
GS  
D Smart Batteries for Portable Devices  
S
1
MICRO FOOT  
Bump Side View  
Backside View  
G
G
1
2
S
S
2
5
6
4
3
2
2
Pin 1 Identifier  
Device Marking:  
G
G
2
1
8901 = P/N Code  
xxx = Date/Lot Traceability Code  
S
2
Ordering Information: Si8901DB-T2—E3  
S
1
1
S
1
P-Channel  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Source1—Source2 Voltage  
Gate-Source Voltage  
V
20  
S1S2  
V
V
"8  
GS  
T
= 25_C  
= 85_C  
3.5  
2.5  
4.4  
3.2  
A
a
Continuous Source1—Source2 Current (T = 150_C)  
I
J
S1S2  
A
T
A
Pulsed Source1—Source2 Current  
I
SM  
30  
T
= 25_C  
= 85_C  
1.7  
0.8  
1
A
a
Maximum Power Dissipation  
P
W
D
T
A
0.5  
Operating Junction and Storage Temperature Range  
T , T  
J
55 to 150  
215  
stg  
VPR  
_C  
c
Package Reflow Conditions  
IR/Convection  
220  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
60  
95  
18  
75  
120  
22  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
b
Maximum Junction-to-Foot  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. The Foot is defined as the top surface of the package.  
c. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.  
Document Number: 73126  
S-41820—Rev. A, 11-Oct-04  
www.vishay.com  
1

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