Datasheet > Si7322DN

Si7322DN

更新时间： 2024-11-29 14:54:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	599K
描述
N-Channel 100 V (D-S) MOSFET

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Si7322DN 数据手册

Si7322DN

Vishay Siliconix

www.vishay.com

N-Channel 100-V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PowerPAK^®1212-8 Single

• 100 % UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Available

APPLICATIONS

• Primary switch

• Isolated DC/DC converters

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. () at V_GS= 10 V

Q_gtyp. (nC)

I_D(A) ^a

100

0.058

N-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free

Lead (Pb)-free and halogen-free

PowerPAK 1212-8

Si7322DN-T1-E3

Si7322DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

100

UNIT

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

18 ^a

16 ^a

Continuous drain current (T_J= 150 °C)

I_D

5.5 ^{b, c}

4.4 ^{b, c}

Pulsed drain current

I_DM

I_S

T_C= 25 °C

18 ^a

3.2 ^{b, c}

Continuous source-drain diode current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

T_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.8 ^{b, c}

2.4 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

TYPICAL

MAXIMUM

UNIT

t 10 s

Steady state

R_thJA

R_thJC

2.4

°C/W

1.9

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 81 °C/W

S-81549-Rev. B, 07-Jul-08

Document Number: 69638

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与Si7322DN相关器件

型号	品牌	获取价格	描述	数据表
SI7322DN-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R
SI7322DN-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R
SI7326DN-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) Fast Switching MOSFET
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SI7328DN-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 30V 18.9A 8-Pin PowerPAK 1212 T/R
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