Datasheet > SI7315DN

SI7315DN

更新时间： 2024-11-29 01:26:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	571K
描述
P-Channel 150 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI7315DN 数据手册

Si7315DN

Vishay Siliconix

P-Channel 150 V (D-S) MOSFET

FEATURES

TrenchFET^®Power MOSFET

PRODUCT SUMMARY

•

Low Thermal Resistance PowerPAK^®

Package with Small Size

I_D(A)^e

V_DS(V)

R_DS(on)() Max.

Q_g(Typ.)

0.315 at V_GS= - 10 V

0.350 at V_GS= - 6 V

- 8.9

- 8.7

•

100 % R_gand UIS Tested

Material categorization:

- 150

15.4 nC

Available

For definitions of compliance please see

www.vishay.com/doc?99912

PowerPAK 1212-8

APPLICATIONS

• Active Clamp in Intermediate DC/DC

Power Supplies

3.3 mm

•

H-Bridge High Side Switch for Lighting

Application

•

Load Switch

Bottom View

Ordering Information:

Si7315DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

V_DS

Limit

- 150

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

- 8.9

- 7.1

Continuous Drain Current (T_J= 150 °C)

I_D

- 2.4^{a, b}

- 1.9^{a, b}

- 10

- 18^f

- 3.2^{a, b}

I_DM

I_S

Pulsed Drain Current (t = 100 µs)

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

Avalanche Current

Single-Pulse Avalanche Energy

L = 0.1 mH

E_AS

9.8

_C= 25 °C

_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

3.8^{a, b}

2.4^{a, b}

- 50 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Based on T_C= 25 °C.

f. Package limited.

Document Number: 62895

S13-1816-Rev. A, 12-Aug-13

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

中文翻译

下载PDF

与SI7315DN相关器件

型号	品牌	获取价格	描述	数据表
SI7315DN-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 8.9A I(D), 150V, 0.315ohm, 1-Element, P-Channel, Silicon, M
SI7317DN	VISHAY	获取价格	P-Channel 150 V (D-S) MOSFET
SI-7321M	SANKEN	获取价格	Stepper Motor Controller, 1.5A, PDSO44, HSOP-44
SI-7321M	ALLEGRO	获取价格	Stepper Motor Controller, 1.5A, PDSO44, LEAD FREE, HSOP-44
Si7322ADN	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SI7322ADN-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
Si7322DN	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SI7322DN-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R
SI7322DN-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R
SI7326DN-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) Fast Switching MOSFET

与SI7315DN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

65
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

SI7315DN

SI7315DN 数据手册

与SI7315DN相关器件

与SI7315DN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SI7315DN

SI7315DN 数据手册

与SI7315DN相关器件

与SI7315DN相关文章

您还可以找

您在本页遇到什么问题？