Datasheet > SI7232DN

SI7232DN

更新时间： 2024-11-25 09:25:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	590K
描述
Dual N-Channel 20-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI7232DN 数据手册

New Product

Si7232DN

Vishay Siliconix

Dual N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

25^f

TrenchFET^®Power MOSFET

Compliant to RoHS Directive 2002/95/EC

0.0164 at V_GS= 4.5 V

0.020 at V_GS= 2.5 V

0.024 at V_GS= 1.8 V

•

25^f

12 nC

24.6

APPLICATIONS

•

DC/DC

Notebook System Power

POL

PowerPAK^®1212-8

3.30 mm

Bottom View

Ordering Information: Si7232DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

25^f

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

23.8

10^{a, b}

8^{a, b}

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

Continuous Source-Drain Diode Current

2.2^{a, b}

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

_C= 70 °C

14.8

2.6^{a, b}

1.7^{a, b}

- 55 to 150

260

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, e}

Maximum Junction-to-Case (Drain)

t ≤ 10 s

Steady State

°C/W

4.3

5.4

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 94 °C/W.

f. Package Limited.

Document Number: 68986

S09-1499-Rev. B, 10-Aug-09

www.vishay.com

12 3 4 5 6 7...13

中文翻译

下载PDF

与SI7232DN相关器件

型号	品牌	获取价格	描述	数据表
SI7232DN-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI7234DP	VISHAY	获取价格	Dual N-Channel 12-V (D-S) MOSFET
SI7234DP-T1-GE3	VISHAY	获取价格	Dual N-Channel 12-V (D-S) MOSFET
SI7236DP	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI7236DP-T1-E3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI7236DP-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
Si7252ADP	VISHAY	获取价格	Dual N-Channel 100 V (D-S) MOSFET
SI7252DP	VISHAY	获取价格	Dual N-Channel 100 V (D-S) MOSFET
SI7270DP	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET
SI7270DP-T1-GE3	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET