Datasheet > SI7224DN

SI7224DN

更新时间： 2024-11-28 09:25:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
18页	606K
描述
Dual N-Channel 30-V (D-S) MOSFET

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Si7224DN

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

TrenchFET^®Power MOSFETs

V_DS(V)

R_DS(on)(Ω)

I_D(A) Q_g(Typ.)

•

6^a

0.035 at V_GS= 10 V

0.042 at V_GS= 4.5 V

0.028 at V_GS= 10 V

0.035 at V_GS= 4.5 V

Channel 1

Channel 2

4.5 nC

RoHS

COMPLIANT

APPLICATIONS

6^a

•

Notebook PC System Power

5.5 nC

•

Low Current POL

PowerPAK^®1212-8

3.30 mm

Bottom View

Ordering Information: Si7224DN-T1-E3 (Lead (Pb)-free)

Si7224DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Channel 1

Channel 2

Unit

V_DS

6^a

6^{a, b, c}

5.2^{b, c}

Drain-Source Voltage

Gate-Source Voltage

V_GS

6^a

6^{a, b, c}

5.9^{b, c}

6^a

2.2^{b, c}

_C= 25 °C

_C= 70 °C

I_D

Continuous Drain Current (T_J= 150 °C)

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

6^a

1.7^{b, c}

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Source Drain Current Diode Current

17.8

11.4

14.8

P_D

Maximum Power Dissipation

2.5^{b, c}

1.6^{b, c}

2.6^{b, c}

1.7^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Channel 1

Typ. Max.

40 50

5.6

Channel 2

Typ. Max.

38 48

4.3 5.4

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Unit

t ≤ 10 s

°C/W

R_thJC

Steady State

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequade bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 94 °C/W.

Document Number: 69500

S-81549-Rev. B, 07-Jul-08

www.vishay.com

12 3 4 5 6 7...18

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与SI7224DN相关器件

型号	品牌	获取价格	描述	数据表
SI7224DN-T1-E3	VISHAY	获取价格	Dual N-Channel 30-V (D-S) MOSFET
SI7224DN-T1-GE3	VISHAY	获取价格	Dual N-Channel 30-V (D-S) MOSFET
SI7228DN	VISHAY	获取价格	Dual N-Channel 30-V (D-S) MOSFET
SI7228DN-T1-GE3	VISHAY	获取价格	Dual N-Channel 30-V (D-S) MOSFET
SI-7230	SANKEN	获取价格	Bipolar Driver IC
SI7230DN-T1-E3	VISHAY	获取价格	TRANSISTOR 9 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, 1
SI7230DN-T1-GE3	VISHAY	获取价格	N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
SI7230E	SANKEN	获取价格	STEPPING MOTOR DRIVER
SI-7230E	SANKEN	获取价格	STEPPING MOTOR DRIVER
SI7230M	ETC	获取价格	Industrial Control IC

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