Si7220DN
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
4.8
Qg (Typ.)
Available
0.060 at VGS = 10 V
0.075 at VGS = 4.5 V
•
•
TrenchFET® Power MOSFET
60
13
New Low Thermal Resistance PowerPAK®
4.3
1
Package,
/
the Space of An SO-8 While
3
Thermally Comparable
APPLICATIONS
•
•
Synchronous Rectification
Primary Side Switch
PowerPAK 1212-8
S1
D
1
D
2
3.30 mm
3.30 mm
1
G1
2
S2
3
G2
4
D1
8
D1
G
1
G
2
7
D2
6
D2
5
Bottom View
S
S
2
1
Ordering Information: Si7220DN-T1-E3 (Lead (Pb)-free)
Si7220DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
60
20
V
VGS
TA = 25 °C
TA = 70 °C
4.8
3.8
3.4
2.7
20
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IAS
EAS
IS
Pulsed Drain Current
Avalanche Current
11
L = 0 1 mH
Single Avalanche Energy
6.1
1.1
1.3
0.69
mJ
A
Continuous Source Current (Diode Conduction)a
2.2
2.6
1.4
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
38
Maximum
Unit
t ≤ 10 s
48
94
Maximum Junction-to-Ambienta
RthJA
Steady State
Steady State
77
°C/W
RthJC
Maximum Junction-to-Case (Drain)
4.3
5.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73117
S-83052-Rev. C, 29-Dec-08
www.vishay.com
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