Datasheet > SI7212DN-T1-GE3

SI7212DN-T1-GE3

更新时间： 2024-11-25 09:25:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	549K
描述
Dual N-Channel 30-V (D-S) MOSFET

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SI7212DN-T1-GE3 数据手册

Si7212DN

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

6.8

Q_g(Typ.)

Definition

0.036 at V_GS= 10 V

0.039 at V_GS= 4.5 V

•

100 % R_gTested

Space Savings Optimized for Fast Switching

Compliant to RoHS Directive 2002/95/EC

6.6

APPLICATIONS

•

Synchronous Rectification

Intermediate Driver

PowerPAK^®1212-8

3.30 mm

Bottom View

Ordering Information: Si7212DN-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

Si7212DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

_A= 85 °C

6.8

4.9

3.5

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

Single Pulse Avalanche Current

2.2

1.1

I_AS

E_AS

L = 0.1 mH

Single Pulse Avalanche Energy

T_A= 25 °C

T_A= 85 °C

2.6

1.4

1.3

Maximum Power Dissipation^a

P_D

0.69

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{b, c}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

R_thJA

Steady State

°C/W

R_thJC

Maximum Junction-to-Case (Drain)

4.3

5.4

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 73128

S09-1815-Rev. F, 14-Sep-09

www.vishay.com

12 3 4 5 6 7...12

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SI7212DN-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SI7212DN-T1-E3	VISHAY	完全替代	Dual N-Channel 30-V (D-S) MOSFET

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