Datasheet > SI7137DP

SI7137DP

更新时间： 2024-09-17 09:25:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	512K
描述
P-Channel 20-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI7137DP 数据手册

New Product

Si7137DP

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

- 60^d

0.00195 at V_GS= - 10 V

0.0025 at V_GS= - 4.5 V

0.0039 at V_GS= - 2.5 V

•

TrenchFET^®Gen III P-Channel Power MOSFET

100 % R_gTested

100 % UIS Tested

Compliant to RoHS Directive 2002/95/EC

- 20

183 nC

PowerPAK SO-8

APPLICATIONS

6.15 mm

5.15 mm

•

Adaptor Switch

Battery Switch

Load Switch

Bottom View

Ordering Information: Si7137DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

- 20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 60^d

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 42^{a, b}

- 33.7^{a, b}

- 100

- 60^d

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

- 5.6^{a, b}

T_A= 25 °C

I_AS

Avalanche Current

- 50

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

125

_C= 25 °C

_C= 70 °C

_A= 25 °C

104

66.6

P_D

Maximum Power Dissipation

6.25^{a, b}

4.0^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{e, f}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

°C/W

Maximum Junction-to-Ambient^{a, c}

t ≤ 10 s

Steady State

Maximum Junction-to-Case

0.9

1.2

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 54 °C/W.

d. Package limited.

e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 69063

S09-0865-Rev. D, 18-May-09

www.vishay.com

12 3 4 5 6 7...13

中文翻译

下载PDF

与SI7137DP相关器件

型号	品牌	获取价格	描述	数据表
SI7137DP-T1-GE3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI7138DP-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 60V 19.7A 8-Pin PowerPAK SO T/R
SI7138DP-T1-GE3	VISHAY	获取价格	N-CH 60-V REDUCED QG,FAST SWITCH MOSFET - Tape and Reel
Si7139DP	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI7139DP-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R
SI7141DP	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI7141DP-T1-GE3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
Si7143DP	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI7145DP	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI7145DP-T1-GE3	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET