Datasheet > SI7136DP-RC

SI7136DP-RC

更新时间： 2024-09-17 06:11:35

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威世 - VISHAY		/
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R-C Thermal Model Parameters

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SI7136DP-RC 数据手册

Si7136DP_RC

Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient Thermal Impedance curves for the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Foot

N/A

Junction to

RT1

Ambient

2.0963

9.0488

8.0177

50.6165

Case

2.3554 m

690.6627 m

1.6922

RT2

RT3

RT4

820.2806 m

Thermal Capacitance (Joules/°C)

Foot

N/A

Junction to

CT1

Ambient

24.2344 m

558.7573 m

70.7495 m

1.4435

Case

136.5785 u

595.8486 u

9.9128 m

8.8712 m

CT2

CT3

CT4

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 73741

Revision 16-Jan-06

www.vishay.com

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