New Product
Si7121DN
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
Halogen-free
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
TrenchFET® Power MOSFET
100% Rg Tested
- 16d
- 16d
0.018 at VGS = - 10 V
0.0305 at VGS = - 4.5 V
RoHS
- 30
22 nC
COMPLIANT
100% UIS Tested
APPLICATIONS
PowerPAK® 1212-8
•
•
Notebook Battery Charging
Notebook Adapter Switch
S
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
Bottom View
Ordering Information: Si7121DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
- 30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
25
- 16d
- 16d
- 10.6a, b
- 8.6a, b
- 50
- 16d
- 3.0a, b
- 20
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
Avalanche Current
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
20
mJ
W
T
T
T
C = 25 °C
C = 70 °C
A = 25 °C
52
33
PD
Maximum Power Dissipation
3.7a, b
2.4a, b
- 55 to 150
260
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
Typical
26
Maximum
Unit
°C/W
Maximum Junction-to-Ambienta, c
t ≤ 10 s
Steady State
33
Maximum Junction-to-Case
1.9
2.4
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 81 °C/W.
d. Package limited.
e. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69956
S-81466-Rev. C, 23-Jun-08
www.vishay.com
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