Datasheet > SI7120DN

SI7120DN

更新时间： 2024-11-06 21:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	68K
描述
N-Channel 60-V (D-S) MOSFET

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SI7120DN 数据手册

Si7120DN

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D New Low Thermal Resistance

0.019 @ V = 10 V

D PowerPAKr 1212-8 Package with

RoHS

COMPLIANT

Available

Low 1.07-mm Profile

0.028 @ V = 4.5 V

8.2

D 100% R_gTested

APPLICATIONS

D Primary Side Switch

PowerPAK 1212-8

D Synchronous Rectification

3.30 mm

Ordering Information: Si7120DN-T1

Si7120DN-T1—E3 (Lead (Pb)-Free)

N-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

6.3

5.1

Continuous Drain Current (T = 150_C)

8.0

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Avalanche Current

3.2

1.3

L = 0.1 mH

Single Avalanche Energy

= 25_C

= 70_C

3.8

2.4

1.5

1.0

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

b,c

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Case (Drain)

1.9

2.4

thJC

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 72771

S-51128—Rev. D, 13-Jun-05

www.vishay.com

12 3 4 5

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